DocumentCode :
1433230
Title :
Heterogeneous Chip Integration Process for Flexible Wireless Microsystem Application
Author :
Chao, Tzu-Yuan ; Liang, Chia-Wei ; Cheng, Y.T. ; Kuo, Chien-Nan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
58
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
906
Lastpage :
909
Abstract :
This paper presents a low-cost heterogeneous integration technology combining the previously developed bump less radio-frequency (RF) system-on-a-package scheme with a special surface cleaning process to assemble a complementary metal-oxide-semiconductor chip with an organic substrate (SU-8/ polydimethylsiloxane) by low-temperature Au-Au thermocompressive bonds (<; 200°C) for flexible wireless microsystem fabrication. The RF performance of -15 dB return loss and -0.25 dB insertion loss at 40 GHz and above 6 MPa bonding strength of a microstrip-to-coplanar-waveguide interconnect transition between the chip and the substrate make the technology practical for flexible wireless microsystem integration.
Keywords :
CMOS integrated circuits; micromechanical devices; system-on-package; SU-8; bump less radio-frequency system-on-a-package scheme; complementary metal-oxide-semiconductor chip; flexible wireless microsystem integration; frequency 40 GHz; heterogeneous chip integration process; loss -0.25 dB; loss -15 dB; microstrip-to-coplanar-waveguide interconnect transition; organic substrate; polydimethylsiloxane; pressure 6 MPa; surface cleaning process; thermocompressive bonds; wireless microsystem fabrication; Au–Au thermocompressive (TC) bonding; bumpless interconnecting; flexible electronics; flip-chip; heterogeneous chip integration; surface cleaning;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2102357
Filename :
5699352
Link To Document :
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