DocumentCode
1433237
Title
Effect of 
Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-  with gadolinium (Gd) cap layers are investigated. With postnitridation, the direct-current and 1/f noise characteristics can be improved apparently. Moreover, a hot-carrier stressing-induced threshold voltage shift can be also suppressed despite of a similar transconductance degradation when comparing with that in the device without nitridation. With the charge-pumping and low-frequency noise measurements, we find that the bulk- and interfacial-trap densities can be reduced with nitrogen incorporation. The reduction of bulk and interfacial traps can be contributed to the suppression of Gd diffusion into a high-κ layer. In this paper, appropriate post-NH<sub>3</sub> plasma nitridation can improve the device performance and reliability and low-frequency noise for a gate-first high-κ/metal-gate nMOSFET with a Gd cap layer.</div></div>
</li>
<li class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOSFET; charge pump circuits; gadolinium; high-k dielectric thin films; hot carriers; nitridation; noise measurement; semiconductor doping; Gd; charge-pumping; high-k dielectric nMOSFET; hot-carrier instability; low-frequency noise measurements; plasma nitridation; Charge pumping; gadolinium (Gd); high- <formula formulatype=)
$kappa$ ; hot-carrier instability (HCI); low-frequency noise; plasma nitridation;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2010.2101606
Filename
5699353
Link To Document