Design of a low-supply-voltage high-efficiency class-E voltage-controlled MMIC oscillator at C-band

Author

Ellinger, Frank ; Lott, Urs ; Bächtold, Werner

Author_Institution

Lab. of Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

49

Issue

1

fYear

2001

fDate

1/1/2001 12:00:00 AM

Firstpage

203

Lastpage

206

Abstract

In this paper, a monolithically integrated voltage-controlled class-E tuned oscillator for C-band has been designed and measured. Large-signal optimization was performed using analytically calculated starting values to reach high efficiencies at ultra-low supply voltages down to 0.9 V. The range of the tuning voltage is from 0 to the supply voltage. With a supply voltage of 1.8 V, an output power of 6.5 dBm, an efficiency of 43%, and a tuning range of 150 MHz is achieved at a center frequency of 4.4 GHz. With a supply voltage of only 0.9 V, the efficiency is 36%, with an output power of 1.1 dBm,and a tuning range of 80 MHz at a frequency of 3.6 GHz. Chip size is less than 1 mm²

Keywords

MESFET integrated circuits; MMIC oscillators; circuit tuning; field effect MMIC; integrated circuit design; low-power electronics; voltage-controlled oscillators; 0.9 to 1.8 V; 3.6 GHz; 36 to 43 percent; 4.4 GHz; C-band; GaAs; GaAs MESFET process; SHF; class-E MMIC VCO; high-efficiency oscillator; large-signal optimization; low-supply-voltage; monolithically integrated oscillator; tuning range; voltage-controlled MMIC oscillator; Capacitance; HEMTs; MMICs; Microwave oscillators; Performance analysis; Power generation; Radio frequency; Tuning; Voltage; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.900010

Filename

900010