Title :
Low-threshold-current, high-quantum-efficiency 1.5 μm GaInAs-GaInAsP GRIN-SCH single quantum well laser diodes
Author :
Matsumoto, Narihito ; Kasukawa, Akihiko ; Namegaya, Takeshi ; Okamoto, Hiroshi
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
The authors fabricated 1.5 μm GaInAs/GaInAsP graded index, separate confinement heterostructure (GRINSCH) single-quantum-well buried heterostructure laser diodes (LDs) by metalorganic chemical vapor deposition. The LDs exhibit a low internal loss of 4.3 cm-1, a high quantum efficiency of 37-40%/facet, and a high light output power of 109 mW. A very low threshold current of 6.2 mA and a high characteristic temperature of 94 K were obtained by facet coating. The perpendicular far-field angle is 26-32°, which is smaller than that of GRINSCH multiple-quantum-well LDs. These LDs oscillated at the n =1 quantized level, not at the n=2 quantized level
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser transitions; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 micron; 109 mW; 37 to 40 percent; 6.2 mA; 94 K; GRIN-SCH single quantum well laser diodes; GaInAs-GaInAsP; III-V semiconductors; characteristic temperature; facet coating; high-quantum-efficiency; internal loss; light output power; metalorganic chemical vapor deposition; perpendicular far-field angle; single-quantum-well buried heterostructure laser diodes; threshold current; Chemical vapor deposition; Coatings; Diode lasers; MOCVD; Optical losses; Photonic band gap; Power generation; Quantum well devices; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
