Title :
High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers
Author :
Kazmierski, Christophe ; Ougazzaden, Abdallah ; Blez, Monique ; Robein, Didier ; Landreau, Jean ; Sermage, Bernard ; Bouley, Jean Claude ; Mircea, A.
Author_Institution :
CNET, Lannion, France
fDate :
6/1/1991 12:00:00 AM
Abstract :
The potential advantages of GaInAs/InP multiquantum well (MQW) structures over bulk material for improving the static properties of buried heterostructure (BH) lasers are demonstrated. Using a highly uniform metalorganic vapor phase epitaxy (MOVPE) growth, an optimized simple separate confinement heterostructure (SCH) MQW layer stack, and the buried ridge stripe (BRS) structure, improved static performances over any bulk or unstrained MQW long wavelength laser were obtained. An extremely low threshold below 2 mA was obtained in short cavity lasers, the threshold current was only 10.6 mA and 110 mW continuous-wave (CW) maximum optical power was observed using 90%/10% reflectivity coatings
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 micron; 10.6 mA; 110 mW; GaInAs-GaInAsP; III-V semiconductors; MQW layer stack; buried heterostructure; buried ridge stripe lasers; continuous-wave; maximum optical power; metalorganic vapor phase epitaxy; multiquantum well; reflectivity coatings; separate confinement heterostructure; short cavity lasers; static performance; threshold current; Coatings; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical materials; Power lasers; Quantum well devices; Reflectivity; Threshold current; Ultraviolet sources;
Journal_Title :
Quantum Electronics, IEEE Journal of
