Title :
Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
Author :
Rosenzweig, Manfred ; Möhrle, Martin ; Düser, Heiko ; Venghaus, Herbert
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
fDate :
6/1/1991 12:00:00 AM
Abstract :
An analysis of the threshold behavior of long-wavelength (λ=1.55 μm) multiquantum well separate-confinement lasers with InGaAs wells and quaternary (λg=1.3 μm) barriers is presented. Using the effective mass approximation and Fermi statistics for carriers, an approximately logarithmic dependence of optical gain on carrier density for quantum well lasers with one confined electron state is predicted theoretically. This prediction is verified by measured threshold currents of broad-area lasers of various cavity lengths and different numbers of quantum wells. Moreover, the characteristic parameters, such as transparency current density, gain constant, and absorption outside the active region, are determined
Keywords :
III-V semiconductors; carrier density; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; semiconductor quantum wells; 1.55 micron; Fermi statistics; III-V semiconductors; InGaAs wells; InGaAs-InGaAsP multiquantum well separate confinement lasers; absorption; active region; broad-area lasers; carrier density; cavity lengths; characteristic parameters; effective mass approximation; gain constant; logarithmic dependence; long-wavelength; one confined electron state; optical gain; quantum well lasers; threshold currents; transparency current density; Carrier confinement; Charge carrier density; Current measurement; Effective mass; Electron optics; Indium gallium arsenide; Laser theory; Quantum mechanics; Quantum well lasers; Statistics;
Journal_Title :
Quantum Electronics, IEEE Journal of
