Reflectivity minimization of semiconductor laser amplifiers with coated and angled facets considering two-dimensional beam profiles

Author

Besse, Pierre-André ; Gu, Jing-Song ; Melchior, Hans

Author_Institution

Inst. of Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1830

Lastpage

1836

Abstract

The reflectivity minimization of semiconductor laser amplifiers and waveguides with straight and angle facets is considered. A formalism, taking two-dimensional waveguides effects into account, that allows the design of multilayer coatings on output facets with minimized reflectivities for either the transverse-electric (TE), transverse-magnetic (TM), or both polarizations is developed. A detailed study of residual modal reflectivities for two-dimensional rectangular laser profiles is presented. Reflectivities as low as 10^-4-10 ^-5 are achieved using angled output facets. The reflectivity of higher order modes and mode conversion are shown to limit the residual reflectivities of tilted laser outputs

Keywords

optical waveguides; reflectivity; semiconductor junction lasers; angled output facets; higher order modes; mode conversion; multilayer coatings; polarizations; reflectivity minimization; residual modal reflectivities; semiconductor laser amplifiers; tilted laser outputs; transverse-electric; transverse-magnetic; two-dimensional beam profiles; two-dimensional rectangular laser profiles; two-dimensional waveguides; Coatings; Laser modes; Nonhomogeneous media; Polarization; Reflectivity; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Tellurium; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.90012

Filename

90012