DocumentCode :
1433453
Title :
Effect of gain dispersion on ultrashort pulse amplification in semiconductor laser amplifiers
Author :
Agrawal, Govind P.
Author_Institution :
Inst. of Opt., Rochester Univ., NY, USA
Volume :
27
Issue :
6
fYear :
1991
fDate :
6/1/1991 12:00:00 AM
Firstpage :
1843
Lastpage :
1849
Abstract :
The effect of gain dispersion in semiconductor laser amplifiers is discussed by considering an amplifier model that includes both gain saturation and gain dispersion. The saturated and unsaturated amplification regimes corresponding to whether the pulse energy is comparable to or much smaller than the saturation energy, are discussed separately. In the unsaturated regime, gain-induced group-velocity dispersion is found to play an important role. The amplified pulse can be compressed or broadened depending on whether the input pulse is chirped or unchirped. The pulse spectrum remains largely unaffected in the linear regime. In the saturation regime, self-phase modulation leads to considerable changes in the pulse spectrum
Keywords :
high-speed optical techniques; semiconductor junction lasers; amplified pulse; amplifier model; frequency chirp; gain dispersion; gain saturation; gain-induced group-velocity dispersion; input pulse; linear regime; pulse energy; pulse spectrum; saturation energy; self-phase modulation; semiconductor laser amplifiers; ultrashort pulse amplification; unsaturated amplification regimes; Dispersion; Laser modes; Optical amplifiers; Optical pulses; Pulse amplifiers; Refractive index; Scanning probe microscopy; Semiconductor lasers; Semiconductor optical amplifiers; Space vector pulse width modulation;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.90014
Filename :
90014
Link To Document :
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