Title :
A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET´s
Author :
Murata, Koichi ; Otsuji, Taiichi ; Yoneyama, Mikio ; Tokumitsu, Masami
Author_Institution :
NTT Optical Network Syst. Labs., Kanagawa, Japan
fDate :
10/1/1998 12:00:00 AM
Abstract :
This paper describes a 4O-Gbit/s decision integrated circuit (IC) fabricated with 0.12-μm gate length GaAs metal-semiconductor field-effect transistors (MESFET´s). A superdynamic flip-flop circuit and a wide-band amplifier were applied in order to attain 40-Gbit/s operation. A conventional static decision IC was also fabricated for comparison. The dynamic decision IC operated up to 40 Gbit/s, which is twice as fast as the conventional static decision IC. Error-free 40-Gbit/s operation is the fastest among GaAs MESFET decision IC´s
Keywords :
III-V semiconductors; MESFET integrated circuits; decision circuits; flip-flops; gallium arsenide; wideband amplifiers; 0.12 micron; 40 Gbit/s; GaAs; GaAs MESFET; flip-flop circuit; superdynamic decision IC; wideband amplifier; Broadband amplifiers; FETs; Flip-flops; Gallium arsenide; HEMTs; MESFET integrated circuits; Operational amplifiers; Optical amplifiers; Time division multiplexing; Wavelength division multiplexing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
