DocumentCode :
1433720
Title :
A 1.5-V differential cross-coupled bootstrapped BiCMOS logic for low-voltage applications
Author :
Tseng, Yuh-Kuang ; Wu, Chung-Yu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
33
Issue :
10
fYear :
1998
fDate :
10/1/1998 12:00:00 AM
Firstpage :
1576
Lastpage :
1579
Abstract :
Two new bipolar complementary metal-oxide-semiconductor (BiCMOS) differential logic circuits called differential cross-coupled bootstrapped BiCMOS (DC2B-BiCMOS) and differential cross-coupled BiCMOS (DC2-BiCMOS) logic are proposed and analyzed. In the proposed two new logic circuits, the novel cross-coupled BiCMOS buffer circuit structure is used to achieve high-speed operation under low supply voltage. Moreover, a new bootstrapping technique that uses only one bootstrapping capacitor is adopted in the proposed DC2B-BiCMOS logic to achieve fast near-full-swing operation at 1.5 V supply voltage for two differential outputs. HSPICE simulation results have shown that the new DC2B-BiCMOS at 1.5 V and the new DC2-BiCMOS logic at 2 V have better speed performance than that of CMOS and other BiCMOS differential logic gates. It has been verified by the measurement results on an experimental chip of three-input DC2B-BiCMOS XOR/XNOR gate chain fabricated by 0.8 μm BiCMOS technology that the speed of DC2-BiCMOS at 1.5 V is about 1.8 times of that of the CMOS logic at 1.5 V. Due to the excellent circuit performance in high-speed, low-voltage operation, the proposed DC2B-BiCMOS and DC2-BiCMOS logic circuits are feasible for low-voltage, high-speed applications
Keywords :
BiCMOS logic circuits; buffer circuits; logic design; 0.8 micron; 1.5 V; 2 V; BiCMOS buffer circuit structure; HSPICE simulation; XOR/XNOR gate chain; differential cross-coupled bootstrapped BiCMOS logic; differential logic circuits; high-speed operation; low-voltage applications; BiCMOS integrated circuits; CMOS logic circuits; CMOS technology; Capacitors; Circuit optimization; Logic circuits; Logic gates; Low voltage; Semiconductor device measurement; Velocity measurement;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.720408
Filename :
720408
Link To Document :
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