Title :
MOS oscillators with multi-decade tuning range and gigahertz maximum speed
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The author studies the realization of fully integrated MOS oscillators with multidecade tuning range and top speed exceeding 1 GHz. This fast operation requires the use of submicrometer fabrication technology. To overcome the analog circuit limitations of the latter, the design of the oscillator is simplified and, in turn, highly redundant digital and analog control capability is provided. A brief review of possible oscillator structures is given and it is found that the best approach for high-speed, wide-range specifications is the relaxation network of the constant-current charge type. Circuit techniques are presented to increase the speed of the latter, based on active use of parasitics and simplified feedback networks. NMOS and CMOS implementations are discussed and compared. The design and performance of an experimental submicrometer NMOS oscillator is presented. This device covers the 100-kHz-to-1-GHz frequency range and has a robust structure
Keywords :
CMOS integrated circuits; MOS integrated circuits; relaxation oscillators; solid-state microwave circuits; 1 GHz; 1 kHz to 1 GHz; CMOS; MOS oscillators; NMOS; constant-current charge; multi-decade tuning; relaxation network; submicrometer fabrication technology; Analog circuits; Circuit optimization; Digital control; Fabrication; Feedback circuits; Frequency; Integrated circuit technology; MOS devices; Oscillators; Tuning;
Journal_Title :
Solid-State Circuits, IEEE Journal of
