Title :
Single spatial mode room temperature operated 3.15μm diode lasers
Author :
Chen, Jiann-Jong ; Hosoda, T. ; Kipshidze, G. ; Shterengas, L. ; Belenky, G. ; Soibel, A. ; Frez, C. ; Forouhar, S.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Abstract :
Ridge waveguide type-I quantum-well GaSb-based diode lasers operating at room temperatures in the spectral region near 3.15 m have been designed and fabricated. The laser active region comprises three InGaAsSb quantum-wells embedded into quinary AlInGaAsSb barrier material to promote carrier confinement. Lasers generate 9 mW of continuous-wave output power at 3.16 m in a diffraction limited beam at 20??C. Devices operate in continuous-wave regime up to 40??C producing above 1 mW of power at wavelength above 3.2 m.
Keywords :
aluminium compounds; indium compounds; ridge waveguides; semiconductor lasers; semiconductor quantum wells; InGaAsSb; continuous wave output power; diffraction limited beam; diode lasers; laser active region; promote carrier confinement; quantum-wells; quinary barrier material; ridge waveguide; room temperatures; single spatial mode room temperature; spectral region; type-I quantum-well; wavelength 3.15 m;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2894
