Title :
Uncooled 43-Gb/s InGaAlAs Light Source for 10-km Transmission
Author :
Hayashi, H. ; Makino, S. ; Kitatani, T. ; Shinoda, K. ; Tanaka, S. ; Sasada, N. ; Naoe, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
4/1/2011 12:00:00 AM
Abstract :
A 1.3-μm-range uncooled electroabsorption/distributed-feedback (EA/DFB) laser was demonstrated. Incorporating an InGaAlAs multiple quantum well (MQW) modulator, a low-capacitance structure, and butt-joint integration, this laser successfully demonstrated 43-Gb/s 10-km transmission for the first time. The developed laser achieved clearly opened eye diagrams with dynamic extinction ratio of over 7 dB over a wide temperature range (25 °C to 85 °C).
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium compounds; indium compounds; optical communication equipment; quantum well lasers; InGaAlAs; bit rate 43 Gbit/s; butt joint integration; distance 10 km; light source; low capacitance structure; multiple quantum well modulator; temperature 25 C to 85 C; uncooled electroabsorption/distributed feedback laser; wavelength 1.3 mum; 40-Gb/s light source; Electroabsorption (EA) modulator integrated distributed feedback (DFB) laser; uncooled operation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2107895
