Title :
Ion implantation in AlxGa1-xAs: damage structures and amorphization mechanisms
Author :
Lagow, Benjamin W. ; Turkot, Britt A. ; Robertson, Ian M. ; Coleman, James J. ; Roh, S.D. ; Forbes, David V. ; Rehn, Lynn E. ; Baldo, Peter M.
Author_Institution :
Frederick Seitz Mater. Res. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
We review previous research on ion implantation in AlxGa1-xAs-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms
Keywords :
III-V semiconductors; aluminium compounds; amorphisation; gallium arsenide; ion implantation; semiconductor heterojunctions; AlxGa1-xAs; AlxGa1-xAs-GaAs heterostructures; AlGaAs-GaAs; amorphization mechanisms; damage accumulation; damage structures; direct impact amorphization mechanisms; ion implantation; point-defect buildup; review; Ion implantation; Laboratories; Lattices; Nuclear electronics; Optoelectronic devices; Production; Radiation effects; Semiconductor materials; Silicon devices; Solids;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.720470
