Title :
Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion
Author :
Si, Sang Kee ; Yeo, Deok Ho ; Yoon, Kyung Hun ; Kim, Sung June
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
Area selectivity of bandgap tuning in the InGaAsP-InP multiquantum-well structure has been investigated using low temperature photoluminescence (PL). The bandgap blue-shift in the intermixed region was as much as 170 meV for a rapid thermal anneal of 30 s at 850°C, and was controllable using annealing temperature and time. From samples with SiO2 stripe patterns, clearly separated PL peaks were observed centered at 0.95 and 1.08 eV, each representing signals originating from the dielectric capped and exposed areas, respectively. In samples with stripes intervals less than 6 μm, PL signals did not separate, but formed one broad spectrum due to lateral diffusion. The lateral diffusion was found less than 3.0 μm
Keywords :
III-V semiconductors; annealing; diffusion; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; spectral line shift; tuning; 0.95 eV; 1.08 eV; 170 meV; 30 s; 850 C; InGaAsP-InP; InGaAsP-InP multiquantum-well intermixing; InGaAsP-InP multiquantum-well structure; SiO2; SiO2 stripe patterns; annealing temperature; annealing time; area selectivity; bandgap blue-shift; bandgap tuning; broad spectrum; dielectric capped areas; impurity-free vacancy diffusion; intermixed region; lateral diffusion; low temperature photoluminescence; rapid thermal anneal; separated PL peaks; Dielectrics; Indium gallium arsenide; Indium phosphide; Optical tuning; Photoluminescence; Photonic band gap; Quantum well devices; Rapid thermal annealing; Semiconductor impurities; Spatial resolution;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.720471
