DocumentCode :
1434193
Title :
Modulation of the second-order nonlinear tensor components in multiple-quantum-well structures
Author :
Aitchison, J.Stewart ; Street, M.W. ; Whitbread, N.D. ; Hutchings, D.C. ; Marsh, John H. ; Kennedy, G.T. ; Sibbett, Wilson
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume :
4
Issue :
4
fYear :
1998
Firstpage :
695
Lastpage :
700
Abstract :
In this paper, we present experimental results which demonstrate that quantum-well intermixing techniques can be used to modulate the magnitude of the second-order nonlinear coefficient χ(2). Impurity-free vacancy disordering with SiO2 and Ga2O3 caps was used to modulate the position of the band edge and hence, the magnitude of χeff(2) . Using a coupled quantum-well structure we were able to demonstrate modulation of the d33 tensor components associated with the asymmetric structure and of the d14 component associated with the bulk crystal structure
Keywords :
electro-optical modulation; nonlinear optics; optical waveguides; semiconductor quantum wells; vacancies (crystal); Ga2O3; Ga2O3 caps; SiO2; asymmetric structure; band edge position modulation; bulk crystal structure; coupled quantum-well structure; d14 component; d33 tensor components; impurity-free vacancy disordering; multiple-quantum-well structures; quantum-well intermixing techniques; second-order nonlinear coefficient; second-order nonlinear tensor component modulation; Birefringence; Frequency conversion; Nonlinear optics; Optical frequency conversion; Optical waveguides; Quantum cascade lasers; Quantum well devices; Quantum wells; Semiconductor lasers; Tensile stress;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.720481
Filename :
720481
Link To Document :
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