DocumentCode
1434218
Title
Semiconductor lasers using diffused quantum-well structures
Author
Yu, S.F. ; Li, E. Herbert
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Volume
4
Issue
4
fYear
1998
Firstpage
723
Lastpage
735
Abstract
We assess the relative merits and prospects of using diffused quantum-well (QW) structures in semiconductor lasers. First, different techniques to achieve interdiffusion are analyzed and compared. Second, recent development of semiconductor lasers using interdiffusion technique is also discussed. Third, the optical properties of diffused QWs are studied. In addition, novel design of diffused QWs structures to maintain stable single-mode operation in semiconductor lasers is proposed. Finally, brief discussion and conclusion are given
Keywords
chemical interdiffusion; diffusion; laser modes; laser stability; optical fabrication; quantum well lasers; semiconductor technology; diffused QW; diffused QW structures; diffused quantum-well structure semiconductor lasers; interdiffusion; interdiffusion technique; optical properties; stable single-mode laser operation; Laser theory; Laser transitions; Laser tuning; Optical device fabrication; Optical refraction; Optical variables control; Quantum well lasers; Refractive index; Semiconductor impurities; Semiconductor lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.720485
Filename
720485
Link To Document