Novel laser structures based on MQW interdiffusion using rapid thermal annealing technique

Author

Zhi-Biao Hao ; Jian-Hua Wang

Volume

4

Issue

4

fYear

1998

Firstpage

736

Lastpage

740

Abstract

In this paper, experimental results for GaAlAs-GaAs multiple-quantum-well (MQW) interdiffusion using rapid thermal annealing (RTA) technique under different processing conditions are presented and discussed. Two kinds of novel laser structures based on such technique are also proposed and fabricated. First, a laser diode with window region for high-power operation is designed and fabricated. The maximum output power of such a device shows an increase by 18% over laser diodes without interdiffused window region. Then a transverse mode controlled laser structure taking advantages of the refractive index change induced by MQW interdiffusion is realized using RTA technique. Single-mode operation up to four times the threshold current has been demonstrated for this RTA treated laser diode

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; laser modes; optical design techniques; optical fabrication; quantum well lasers; rapid thermal annealing; refractive index; GaAlAs-GaAs; GaAlAs-GaAs multiple-quantum-well interdiffusion; MQW interdiffusion; RTA treated laser diode; high-power operation; interdiffused window region; laser diode; laser structures; maximum output power; processing conditions; rapid thermal annealing technique; refractive index change; single-mode operation; threshold current; transverse mode controlled laser structure; window region; Diode lasers; Laser modes; Laser transitions; Optical control; Optical design; Power generation; Quantum well devices; Rapid thermal annealing; Rapid thermal processing; Refractive index;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.720486

Filename

720486