Title :
Theoretical studies of AlGaAs-GaAs multiple-quantum-well optical couplers defined by ion-implantation-induced intermixing
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
A simple and accurate model is presented for the analysis of ion-implanted AlGaAs-GaAs multiple-quantum-well (MQW) symmetric and asymmetric optical couplers. The modal propagation constants and field profiles of the guided modes of the couplers are solved numerically using a quasi-vector method based on the Galerkin´s method. MQW optical couplers defined by ion-implantation-induced intermixing are shown to have similar optical properties as conventional dielectric rib optical couplers. They also provide a more flexible control over the waveguiding and coupling characteristics by changing parameters such as waveguide separation, mask width, ion implant energy, and diffusion time
Keywords :
Galerkin method; III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; optical couplers; semiconductor device models; semiconductor quantum wells; symmetry; AlGaAs-GaAs; AlGaAs-GaAs multiple-quantum-well optical couplers; Galerkin´s method; accurate model; asymmetric optical couplers; coupling characteristics; dielectric rib optical couplers; diffusion time; field profiles; guided modes; ion implant energy; ion-implantation-induced intermixing; ion-implanted AlGaAs-GaAs MQW symmetric optical couplers; mask width; modal propagation constants; quasi-vector method; theoretical studies; waveguide separation; waveguiding; Couplers; Optical buffering; Optical coupling; Optical refraction; Optical superlattices; Optical variables control; Optical waveguides; Particle beam optics; Quantum well devices; Refractive index;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.720490