DocumentCode :
1434251
Title :
Colossal Lateral Photovoltaic Effect Observed in Metal-Oxide-Semiconductor Structure of 
Author :
Liu, S. ; Yu, C.Q. ; Wang, H.
Author_Institution :
Dept. of Phys., Shanghai Jiao Tong Univ., Shanghai, China
Volume :
33
Issue :
3
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
414
Lastpage :
416
Abstract :
How to obtain a large sensitivity has been a central issue of lateral photovoltaic effects (LPEs) since it had been discovered many decades ago. This work reports a colossal LPE in a nanolayer Ti and TiO2 modulated metal-oxide-semiconductor (MOS) structure of Ti/TiO2/Si. The obtained 169 mV/mm sensitivity in this structure represents currently the highest level compared with previously reported results of 700 μV/mm-60 mV/mm in any other systems. The results indicate this MOS structure can be used as novel position-sensitive detectors with high sensitivity.
Keywords :
MIS devices; sensitivity; silicon; titanium; titanium compounds; MOS structure; Ti-TiO2-Si; colossal LPE; colossal lateral photovoltaic effect; lateral photovoltaic effects; metal-oxide-semiconductor structure; position-sensitive detectors; sensitivity; Detectors; Metals; Photovoltaic effects; Semiconductor device measurement; Semiconductor lasers; Sensitivity; Silicon; Heterojunctions; photodetectors; photovoltaic effects (LPEs); thin films;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2181325
Filename :
6142009
Link To Document :
