Photonic integrated circuits fabricated using ion implantation

Author

Charbonneau, Sylvain ; Koteles, Emil S. ; Poole, P.J. ; He, J.J. ; Aers, G.C. ; Haysom, J. ; Buchanan, M. ; Feng, Y. ; Delage, A. ; Yang, F. ; Davies, M. ; Goldberg, R.D. ; Piva, P.G. ; Mitchell, I.V.

Author_Institution

Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

4

Issue

4

fYear

1998

Firstpage

772

Lastpage

793

Abstract

Intermixing the wells and barriers of quantum-well (QW) laser heterostructures generally results in an increase in the bandgap energy and is accompanied by changes in the refractive index. A technique, based on ion implantation-induced QW intermixing, has been developed to enhance the quantum-well intermixing (QWI) rate in selected areas of a wafer. Such processes offer the prospect of a powerful and simple fabrication route for the integration of discrete optoelectronic devices and for forming photonic integrated circuits

Keywords

chemical interdiffusion; integrated circuit technology; ion implantation; optical fabrication; optoelectronic devices; quantum well lasers; refractive index; bandgap energy; discrete optoelectronic device integration; ion implantation; ion implantation-induced QW intermixing; photonic integrated circuits; photonic integrated circuits fabrication; quantum well intermixing; quantum wire intermixing; quantum-well intermixing rate; quantum-well laser heterostructures; refractive index; Integrated optics; Ion implantation; Optical devices; Optical fiber communication; Optical interconnections; Optical materials; Optoelectronic devices; Photonic integrated circuits; Quantum well lasers; Semiconductor materials;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.720491

Filename

720491