Title :
33-GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifier
Author :
Rodwell, Mark ; Jensen, J.F. ; Stanchina, W.E. ; Metzger, R.A. ; Rensch, D.B. ; Pierce, M.W. ; Kargodorian, T.V. ; Allen, Y.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
10/1/1991 12:00:00 AM
Abstract :
Microwave cascode feedback amplifiers with 8.6-dB gain and DC to 33-GHz bandwidth were developed. The amplifiers utilize AlIn-As/GaInAs heterojunction bipolar transistors having fmax=70 GHz and fτ=90 GHz. Because of the significant collector-base feedback time constant the cascode configuration provides a large improvement in amplifier bandwidth, but a low-impedance bias node must be provided for the common-base transistor. An active bias network was thus used which eliminates the need for on-wafer Si3 N4 bypass capacitors
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave amplifiers; 33 GHz; 8.6 dB; AlInAs-GaInAs; active bias network; amplifier bandwidth; collector-base feedback time constant; heterojunction bipolar transistor feedback amplifier; low-impedance bias node; microwave cascode feedback amplifiers; Bandwidth; Bipolar transistors; Circuits; Costs; Doping; Feedback amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Substrates;
Journal_Title :
Solid-State Circuits, IEEE Journal of
