DocumentCode
1434271
Title
Corrections To "Lasing Mechanism Of InGaN-GaN-AlGaN MQW Laser Diode Grown On SiC By Low-pressure Metal~organic Vapor Phase Epitaxy"
Author
Domen, K. ; Kuramata, A. ; Soejima, R. ; Horino, K. ; Kubota, S. ; Tanahashi, T.
Volume
4
Issue
4
fYear
1998
Firstpage
803
Lastpage
803
Keywords
Aluminum gallium nitride; Capacitive sensors; Diode lasers; Excitons; Gallium nitride; Quantum well devices; Quantum well lasers; Semiconductor lasers; Silicon carbide; Surface emitting lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.1998.720493
Filename
720493
Link To Document