Title :
Corrections To "Lasing Mechanism Of InGaN-GaN-AlGaN MQW Laser Diode Grown On SiC By Low-pressure Metal~organic Vapor Phase Epitaxy"
Author :
Domen, K. ; Kuramata, A. ; Soejima, R. ; Horino, K. ; Kubota, S. ; Tanahashi, T.
Keywords :
Aluminum gallium nitride; Capacitive sensors; Diode lasers; Excitons; Gallium nitride; Quantum well devices; Quantum well lasers; Semiconductor lasers; Silicon carbide; Surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.1998.720493
