Author :
Kerns, S.E. ; Shafer, B.D. ; van Vonno, N. ; Barber, F.E.
Author_Institution :
Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN
Abstract :
Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ICs
Keywords :
CMOS integrated circuits; III-V semiconductors; VLSI; bipolar integrated circuits; digital integrated circuits; elemental semiconductors; emitter-coupled logic; failure analysis; field effect integrated circuits; gallium arsenide; integrated circuit technology; radiation hardening (electronics); reliability; silicon; A/D convertors; CML; CMOS/SOI; CMOS/SOS; DI; E/D heterojunction MESFET; ECL; GaAs; Si; analog bipolar; bulk CMOS; compendium of approaches; computer simulation; current-mode logic; design examples; design of radiation-hardened ICs; device design parameter variations; dielectric isolation; direct effects; emitter-coupled logic; epi CMOS; high-speed circuits; junction isolation; microelectronic materials; operational amplifiers; semiconductors; space radiation; techniques for hardening; CMOS logic circuits; CMOS technology; Gallium arsenide; Heterojunctions; Logic devices; MESFETs; Microelectronics; Radiation hardening; Silicon on insulator technology; Space technology;
