• DocumentCode
    1434633
  • Title

    Waveguide-to-microstrip transition at G-band using elevated E-plane probe

  • Author

    Donadio, O. ; Elgaid, K. ; Appleby, R.

  • Author_Institution
    Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
  • Volume
    47
  • Issue
    2
  • fYear
    2011
  • fDate
    1/1/2011 12:00:00 AM
  • Firstpage
    115
  • Lastpage
    116
  • Abstract
    A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than -10dB between 150 and 200GHz and S21==4dB at centre band (180GHz) for two transitions in back-to-back configuration.
  • Keywords
    MMIC; probes; G-band; elevated E-plane probe; monolithic microwave integrated circuit; rectangular waveguide-to-microstrip transition; semi-insulating gallium arsenide; semiconductor material; substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.2926
  • Filename
    5700006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1434633