• DocumentCode
    1434708
  • Title

    Voltage controllable dual-band response from InAs/GaSb strained layer superlattice detectors with nBn design

  • Author

    Plis, Elena ; Krishna, S. Sagar ; Smith, E.P. ; Johnson, Stanley ; Krishna, Sanjay

  • Author_Institution
    SK Infrared, LLC, Albuquerque, NM, USA
  • Volume
    47
  • Issue
    2
  • fYear
    2011
  • fDate
    1/1/2011 12:00:00 AM
  • Firstpage
    133
  • Lastpage
    134
  • Abstract
    A report is presented on voltage controllable mid-wave infrared (MWIR) and long-wave infrared (LWIR) response using an InAs/GaSb strained layer superlattice detector with an nBn design. Under forward bias, the MWIR carriers are extracted and under reverse bias the LWIR carriers are extracted. Peak detectivity was measured to be 1.2 × 1011 Jones (at λ = 5 μm and Vb = +1 = V) and 1.2 × 1010 Jones (at λ = 10 μm and Vb = -1 V).
  • Keywords
    semiconductor superlattices; voltage control; InAs-GaSb; long-wave infrared response; peak detectivity; strained layer superlattice detector; voltage controllable dual-band response; voltage controllable mid-wave infrared;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.3096
  • Filename
    5700018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1434708