DocumentCode
1434744
Title
Design applications of compact MOSFET model for extended temperature range (60??400k)
Author
ZHU, Z. Q. ; Kathuria, A. ; Krishna, S.G. ; Mojarradi, Mohammad ; Jalali-Farahani, B. ; Barnaby, Hugh ; Wu, Wenchuan ; Gildenblat, Gennady
Author_Institution
Ira A. Fulton Sch. of Eng., Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Volume
47
Issue
2
fYear
2011
fDate
1/1/2011 12:00:00 AM
Firstpage
141
Lastpage
142
Abstract
An advanced MOSFET model for the 60-400-K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.
Keywords
MOSFET; semiconductor device models; circuit simulator; industry standard PSP model; low temperature MOSFET characteristics; switched-capacitor integrator design; temperature 60 K to 400 K;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.3468
Filename
5700023
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