Title :
Design applications of compact MOSFET model for extended temperature range (60??400k)
Author :
ZHU, Z. Q. ; Kathuria, A. ; Krishna, S.G. ; Mojarradi, Mohammad ; Jalali-Farahani, B. ; Barnaby, Hugh ; Wu, Wenchuan ; Gildenblat, Gennady
Author_Institution :
Ira A. Fulton Sch. of Eng., Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fDate :
1/1/2011 12:00:00 AM
Abstract :
An advanced MOSFET model for the 60-400-K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.
Keywords :
MOSFET; semiconductor device models; circuit simulator; industry standard PSP model; low temperature MOSFET characteristics; switched-capacitor integrator design; temperature 60 K to 400 K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3468
