Effects of ion-beam mixing on the performance and reliability of devices with self-aligned silicide structure

Author

Ku, Y.H. ; Lee, S.K. ; Kwong, Dim-Lee ; Lee, C.O. ; Yeargain, John R.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

9

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

293

Lastpage

295

Abstract

The uniformity of Ti silicide resistance has been greatly improved by using an ion-beam mixing technique. The integrity of both MOS capacitors and p-n junction diodes has been improved. N-channel MOS field-effect transistors fabricated with this technique show better electrical characteristics, less electron trapping in the gate oxide, and better hot-carrier resistance than with devices made without the use of ion-beam mixing.<>

Keywords

VLSI; capacitors; insulated gate field effect transistors; metallisation; reliability; semiconductor technology; titanium compounds; MOS capacitors; N-channel MOS field-effect transistors; TiSi/sub 2/; electrical characteristics; electron trapping; gate oxide; hot-carrier resistance; integrity; ion-beam mixing; p-n junction diodes; performance; reliability of devices; salicides; self-aligned silicide structure; silicide resistance uniformity; Annealing; CMOS technology; Diodes; Electric resistance; FETs; Hot carriers; MOS capacitors; P-n junctions; Silicides; Titanium;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.721

Filename

721