DocumentCode
1434872
Title
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design
Author
Raffo, Antonio ; Vadalà, Valeria ; Schreurs, Dominique M M P ; Crupi, Giovanni ; Avolio, Gustavo ; Caddemi, Alina ; Vannini, Giorgio
Author_Institution
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
Volume
58
Issue
4
fYear
2010
fDate
4/1/2010 12:00:00 AM
Firstpage
710
Lastpage
718
Abstract
This paper presents a new modeling approach accounting for the nonlinear description of low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron devices. The theoretical formulation is quite general and includes as particular cases different models proposed in the literature. A large set of experimental results, oriented to microwave GaN power amplifier design, is provided to give an exhaustive validation under realistic device operation.
Keywords
gallium compounds; microwave power amplifiers; nonlinear distortion; semiconductor device models; GaN; electron devices; low-frequency dispersive effects; microwave GaN power amplifier design; nonlinear description; nonlinear dispersive modeling; Field-effect transistors (FETs); microwave amplifiers; nonlinear circuits; nonlinear distortion; semiconductor device modeling;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2010.2041572
Filename
5427145
Link To Document