• DocumentCode
    1435030
  • Title

    Steady-state properties of lock-on current filaments in GaAs

  • Author

    Kambour, K. ; Kang, Samsoo ; Myles, Charles W. ; Hjalmarson, Harold P.

  • Author_Institution
    Dept. of Phys., Texas Tech. Univ., Lubbock, TX, USA
  • Volume
    28
  • Issue
    5
  • fYear
    2000
  • fDate
    10/1/2000 12:00:00 AM
  • Firstpage
    1497
  • Lastpage
    1499
  • Abstract
    Collective impact ionization has been used to explain lock-on in semi-insulating GaAs under high-voltage bias. We have used this theory to study some of the steady-state properties of lock-on current filaments. In steady state, the heat gained from the field is exactly compensated by the cooling due to phonon scattering. In the simplest approximation, the carrier distribution approaches a quasi equilibrium Maxwell-Boltzmann distribution. In this report, we examine the validity of this approximation. We find that this approximation leads to a filament carrier density that is much lower than the high density needed to achieve a quasi-equilibrium distribution. Further work on this subject is in progress
  • Keywords
    gallium arsenide; impact ionisation; photoconducting switches; GaAs; carrier distribution; collective impact ionization; filament carrier density; high-voltage bias; lock-on current filaments; phonon scattering; quasi equilibrium Maxwell-Boltzmann distribution; semi-insulating GaAs; semiconductor; steady-state properties; Cooling; Distribution functions; Gallium arsenide; Heating; Impact ionization; Optical scattering; Optical switches; Phonons; Plasma temperature; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/27.901221
  • Filename
    901221