III-Nitride Schottky Rectifiers With an AlGaN/GaN/AlGaN/GaN Quadruple Layer and Their Applications to UV Detection

Author

Chang, P.C. ; Lee, K.H. ; Chang, S.J. ; Su, Y.K. ; Lin, T.C. ; Wu, S.L.

Author_Institution

Dept. of Electr. Eng., Kun Shan Univ., Yung-Kang, Taiwan

Volume

10

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

799

Lastpage

804

Abstract

III-nitride Schottky rectifiers (SRs) with (i.e., SR_A) and without (i.e., SR_B) the AlGaN/GaN/AlGaN/GaN quadruple layer were both fabricated. It was found that we could achieve a lower leakage current from SR_A. Under reverse bias, it was found that SR_A showed a more than five orders magnitude smaller dark current than that in SR_B. It was also found that lower on-state resistance was due to the larger Schottky barrier height and larger breakdown voltage was due to reduced defect densities in SR_A. The SRs with a quadruple layer was suitable for applications to low noise or/and ultraviolet (UV) detection as well.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; aluminium compounds; contact resistance; dark conductivity; gallium compounds; leakage currents; semiconductor device breakdown; semiconductor junctions; solid-state rectifiers; ultraviolet detectors; wide band gap semiconductors; AlGaN-GaN; III-nitride Schottky rectifiers; Schottky barrier height; breakdown voltage; dark current; defect density; leakage current; low noise UV detection; on-state resistance; quadruple layer; reverse bias; ultraviolet detection; Aluminum gallium nitride; Dark current; Gallium nitride; Leakage current; Microelectronics; Nanoporous materials; Rectifiers; Schottky barriers; Strontium; Substrates; Quadruple layer; Schottky rectifiers;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2009.2034626

Filename

5427256