Title :
Ka-band and MMIC pHEMT-based VCO´s with low phase-noise properties
Author :
Garner, Peter J. ; Howes, Michael J. ; Snowden, Christopher M.
Author_Institution :
Inst. of Microwaves & Photonics, Leeds Univ., UK
fDate :
10/1/1998 12:00:00 AM
Abstract :
Two pseudomorphic high electron-mobility transistor (pHEMT)-based Ka-band voltage-controlled oscillators (VCO´s), which have exhibited novel close-to-carrier phase-noise properties in conjunction with output powers greater than previously reported heterojunction bipolar transistor (HBT) based oscillators, are presented in this paper. Good low phase noises of at least -70 and -75 dBc/Hz at an offset of 100 kHz around 38 GHz have been measured for the two different VCO designs over reasonable frequency tuning ranges with flat or linear output-power tuning in these ranges. Both designs show a strong dependence between phase noise and tuning-element bias conditions
Keywords :
HEMT integrated circuits; MMIC oscillators; circuit tuning; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 38 GHz; Ka-band; MMIC; close-to-carrier phase-noise; frequency tuning ranges; linear output-power tuning; low phase-noise properties; output powers; pHEMT-based VCO; tuning-element bias conditions; Frequency measurement; Heterojunction bipolar transistors; MMICs; Noise measurement; PHEMTs; Phase measurement; Phase noise; Power generation; Tuning; Voltage-controlled oscillators;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
