Title :
Improved HEMT model for low phase-noise InP-based MMIC oscillators
Author :
Schreurs, D. ; van Meer, H. ; Van der, K. Zanden ; De Raedt, W. ; Nauwelaers, B. ; Van de Capelle, A.
Author_Institution :
ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium
fDate :
10/1/1998 12:00:00 AM
Abstract :
This paper focuses on two modeling aspects to improve the accuracy of low phase-noise monolithic-microwave integrated-circuit (MMIC) oscillator design. Up until now, the modeling of InP-based high electron mobility transistors (HEMTs) has mainly been limited to the representation of small-signal and thermal noise behavior. In this paper, we present a scaleable nonlinear and bias-dependent low-frequency (LF) noise model
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC oscillators; indium compounds; integrated circuit modelling; integrated circuit noise; phase noise; thermal noise; HEMT model; InP; MMIC oscillators; bias-dependent low-frequency noise model; phase noise; scaleable nonlinear model; small-signal noise; thermal noise; Capacitance; Dispersion; HEMTs; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; Low-frequency noise; MMICs; MODFET integrated circuits; Oscillators;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
