DocumentCode :
1435258
Title :
Nonlinear modeling and design of bipolar transistors ultra-low phase-noise dielectric-resonator oscillators
Author :
Regis, M. ; Llopis, O. ; Graffeuil, J.
Author_Institution :
LAAS, CNRS, Toulouse, France
Volume :
46
Issue :
10
fYear :
1998
fDate :
10/1/1998 12:00:00 AM
Firstpage :
1589
Lastpage :
1593
Abstract :
This paper presents a design methodology for low phase-noise dielectric-resonator oscillators (DRO´s) with applications examples at 4 GHz. Different oscillators topologies are investigated and, finally, three oscillators´ configurations have been simulated, realized in discrete elements, and characterized. The best measured phase-noise magnitude is -133 dBc/Hz at 10-kHz offset frequency
Keywords :
bipolar transistor circuits; circuit noise; dielectric resonator oscillators; microwave oscillators; phase noise; 4 GHz; bipolar transistor; design; dielectric resonator oscillator; discrete element simulation; nonlinear model; phase noise; Bipolar transistors; Circuit simulation; Dielectrics; Frequency; Heterojunction bipolar transistors; Low-frequency noise; Microwave oscillators; Noise measurement; Phase measurement; Phase noise;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.721171
Filename :
721171
Link To Document :
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