Diamond transistor performance and fabrication

Author

Geis, Michael W.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

79

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

669

Lastpage

676

Abstract

The author reviews some of the device properties of diamonds, as well as recently developed diamond device fabrication techniques for high-frequency, high-power transistors. Two advantages of diamond over other semiconductors used for high-frequency, high power devices are its high thermal conductivity and high electric-field breakdown. Homoepitaxial diamond has been grown by both plasma and hot-filament techniques. The device properties of homoepitaxial diamond produced by the hot-filament technique are reviewed. Much of the development necessary for the production of diamond devices already exists. Doping by homoepitaxy, diamond etching, device quality SiO₂-diamond interface, and ohmic contact technology are reviewed. The remaining problems are the development of large area single crystal diamond substrates, improvement of doping techniques, and refinement in ohmic contact technology

Keywords

diamond; field effect transistors; ohmic contacts; power transistors; semiconductor technology; FET; device properties; diamond device fabrication techniques; doping techniques; electric-field breakdown; etching; high-power transistors; homoepitaxial diamond; hot-filament techniques; ohmic contact technology; substrates; thermal conductivity; Doping; Electric breakdown; Fabrication; Ohmic contacts; Plasma applications; Plasma devices; Plasma properties; Production; Semiconductor device breakdown; Thermal conductivity;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.90131

Filename

90131