DocumentCode
1435628
Title
Current memory based differentiator with protection of storage node
Author
Wang, C.
Author_Institution
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
Volume
34
Issue
20
fYear
1998
fDate
10/1/1998 12:00:00 AM
Firstpage
1897
Lastpage
1898
Abstract
A time-domain differentiator based on current memory is presented. To ensure processing accuracy, an MOS charge divider is used to reduce the effect of charge injection and a well (n or p type) is used to protect the storage device from minority carrier diffusion in the substrate. The circuit operates at low current levels. A single-poly CMOS technology can be used for circuit implementation
Keywords
CMOS analogue integrated circuits; analogue storage; differentiating circuits; dividing circuits; MOS charge divider; current memory; minority carrier diffusion; processing accuracy; single-poly CMOS technology; storage device; time-domain differentiator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981374
Filename
721949
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