Title :
A new analytical model for the two-terminal MOS capacitor on SOI substrate
Author :
Flandre, Denis ; Van de Wiele, Fernand
Author_Institution :
Microelectron. Lab., Catholic Univ. of Louvain-la-Neuve, Belgium
fDate :
6/1/1988 12:00:00 AM
Abstract :
An analytical model for the two-terminal metal-oxide-semiconductor-oxide-semiconductor (MOSOS) structure, which takes into account the width of the accumulation layer in the SOI film and the space-charge region in the underlying Si substrate, is presented. The results of the model are compared with results one-dimensional (1-D) numerical simulations for a uniformly doped Si film and substrate, showing considerable improvement in accuracy compared to traditional models.<>
Keywords :
capacitors; field effect integrated circuits; integrated circuit technology; semiconductor device models; MOSOS; SOI ICs; SOI substrate; SOS ICs; accumulation layer width; analytical model; improvement in accuracy; metal-oxide-semiconductor-oxide-semiconductor; space-charge region; two-terminal MOS capacitor; underlying Si substrate; Analytical models; Charge carrier processes; Electric potential; MOS capacitors; Numerical simulation; Poisson equations; Semiconductor films; Semiconductor process modeling; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
