Title :
Broad area semiconductor lasers with improved near and far fields using enhanced current spreading [InGaAs/GaAs/AlGaAs]
Author :
O´Brien, Peter A. ; Skovgaard, P.M.W. ; McInerney, J.G. ; Roberts, J.S.
Author_Institution :
Dept. of Phys., Univ. Coll. Cork, Ireland
fDate :
10/1/1998 12:00:00 AM
Abstract :
Improved near and far field distributions in broad area semiconductor lasers are demonstrated using a novel technique for smoothing the transverse current injection profile by introducing a thick (10 μm) p-GaAs layer to increase carrier diffusion. This results in narrower and more symmetrical far fields compared to standard broad area lasers, especially when operating at high output powers
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; gallium arsenide; indium compounds; semiconductor lasers; 10 micron; InGaAs-GaAs-AlGaAs; broad area semiconductor lasers; carrier diffusion; enhanced current spreading; far field distribution; high output powers; near field distribution; transverse current injection profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981337
