Title :
Different-wavelength modulator-integrated DFB-LDs for 1.58 μm band WDM systems
Author :
Kudo, K. ; Muroya, Y. ; Nakazaki, T. ; Inomoto, Y. ; Ishizaka, M. ; Yamaguchi, M.
Author_Institution :
NEC Corp., Ibaraki, Japan
fDate :
10/1/1998 12:00:00 AM
Abstract :
1.56-1.61 μm range modulator-integrated distributed-feedback laser diodes (DFB/MODs) of different wavelengths are successfully demonstrated for applications in 1.58 μm band WDM systems. They were fabricated on a single wafer by using narrow-stripe selective MOVPE with a novel growth-time-modulation (GTM) technique. Uniform and high-performance characteristics such as a threshold current less than 5 mA and an extinction ratio larger than 16 dB at -2 V were achieved
Keywords :
optical modulation; 1.56 to 1.61 micrometre; WDM systems; different-wavelength modulator-integrated DFB-LDs; extinction ratio; growth-time-modulation technique; narrow-stripe selective MOVPE; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981371
