• DocumentCode
    1435882
  • Title

    Double-fused 1.5 μm vertical cavity lasers with record high T o of 132 K at room temperature [Al(Ga)As/GaAs]

  • Author

    Black, K.A. ; Abraham, Pierre ; Margalit, N.M. ; Hegblom, E.R. ; Chiu, Yi-Jen ; Piprek, Joachim ; Bowers, John E. ; Hu, E.L.

  • Author_Institution
    Dept. of Mater., California Univ., Santa Barbara, CA
  • Volume
    34
  • Issue
    20
  • fYear
    1998
  • fDate
    10/1/1998 12:00:00 AM
  • Firstpage
    1947
  • Lastpage
    1949
  • Abstract
    The authors report record high temperature performance of a novel long wavelength vertical cavity laser using an electron barrier, operating continuous-wave up to 71°C. A record high characteristic temperature (To) of 132 K has been measured over an operating range of -75 to 35°C
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; optical fibre communication; optical transmitters; semiconductor lasers; surface emitting lasers; -75 to 35 degC; 1.5 micrometre; 132 K; Al(Ga)As-GaAs; characteristic temperature; continuous-wave operation; double-fused vertical cavity lasers; electron barrier; high temperature performance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981344
  • Filename
    722045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1435882