• DocumentCode
    1435972
  • Title

    16-pixel linear array of near-infrared photodetectors in polycrystalline Ge on Si

  • Author

    Colace, L. ; Masini, G. ; Galluzzi, F. ; Assanto, G.

  • Author_Institution
    Dept. of Electron. Eng., Terza Univ. of Rome, Italy
  • Volume
    34
  • Issue
    20
  • fYear
    1998
  • fDate
    10/1/1998 12:00:00 AM
  • Firstpage
    1968
  • Lastpage
    1969
  • Abstract
    A novel one-dimensional array of photodetectors for the near infrared up to 1.55 μm is reported. The device is based on polycrystalline Ge thermally evaporated on silicon, and consists of 16 pixels at a 100 μm pitch. A responsivity of 16 mA/W was measured at 1.3 μm with nanosecond response time
  • Keywords
    elemental semiconductors; germanium; photodetectors; vacuum deposited coatings; 1.3 to 1.55 micron; 16 pixel; Ge-Si; Si substrate; linear array; near-infrared photodetector; one-dimensional array; polycrystalline Ge; thermally evaporated film;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981361
  • Filename
    722059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1435972