• DocumentCode
    1435979
  • Title

    Stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy

  • Author

    Herzog, W.D. ; Goldberg, B.B. ; Ünlü, M.S. ; Singh, R. ; Dabkowski, F.P.

  • Author_Institution
    Dept. of Phys., Boston Univ., MA, USA
  • Volume
    34
  • Issue
    20
  • fYear
    1998
  • fDate
    10/1/1998 12:00:00 AM
  • Firstpage
    1970
  • Lastpage
    1971
  • Abstract
    The authors report room temperature stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy. The threshold for bulk stimulated emission was found to be 3.4 MW/cm2 with an emission linewidth of 1.2 nm
  • Keywords
    III-V semiconductors; gallium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; stimulated emission; vapour phase epitaxial growth; GaN; III-V nitride system; as-grown hexagons; bulk stimulated emission; emission linewidth; hydride vapour phase epitaxy; selective area growth; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981382
  • Filename
    722060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1435979