• DocumentCode
    1435993
  • Title

    55 GHz dynamic frequency divider IC

  • Author

    Lao, Z. ; Thiede, A. ; Hornung, J. ; Schlechtweg, M. ; Lienhart, H. ; Bronner, W. ; Hülsmann, A. ; Jakobus, T. ; Seibel, J. ; Sedler, M. ; Kaufel, G.

  • Author_Institution
    Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany
  • Volume
    34
  • Issue
    20
  • fYear
    1998
  • fDate
    10/1/1998 12:00:00 AM
  • Firstpage
    1973
  • Lastpage
    1974
  • Abstract
    A divide-by-two dynamic frequency divider based on enhancement and depletion 0.2 μm gate length pseudomorphic AlGaAs/InGaAs HEMTs (fT=68 GHz and 60 GHz) was designed and fabricated. High-speed operation up to 55 GHz has been measured. The circuit is based on source-coupled FET logic and has single-ended input and complementary outputs to ground. The power consumption is 300 mW using two supply voltages of 4 and -2.5 V
  • Keywords
    HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect logic circuits; frequency dividers; gallium arsenide; indium compounds; -2.5 V; 0.2 micron; 300 mW; 4 V; 55 GHz; 60 GHz; 68 GHz; AlGaAs-InGaAs; complementary outputs; dynamic frequency divider; frequency divider IC; high-speed operation; power consumption; pseudomorphic HEMTs; single-ended input; source-coupled FET logic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981336
  • Filename
    722062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1435993