DocumentCode
1436012
Title
Influence of quadratic mobility degradation factor on low frequency noise in MOS transistors
Author
Masson, P. ; Ghibaudo, G. ; Autran, J.L. ; Morfouli, P. ; Brini, J.
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Volume
34
Issue
20
fYear
1998
fDate
10/1/1998 12:00:00 AM
Firstpage
1977
Lastpage
1979
Abstract
The influence of the quadratic attenuation mobility factor on the low frequency 1/f noise in MOS transistors is investigated. By taking into account the correlated mobility fluctuations, the influence of the surface roughness scattering on the input referred noise under strong inversion is analysed. The quadratic attenuation mobility factor is found to reduce the impact of the mobility fluctuations on the normalised drain current noise
Keywords
1/f noise; MOSFET; carrier mobility; semiconductor device noise; surface scattering; MOS transistor; drain current; low frequency 1/f noise; mobility fluctuations; quadratic attenuation mobility factor; quadratic mobility degradation factor; surface roughness scattering;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981122
Filename
722065
Link To Document