DocumentCode :
1436209
Title :
Thermal resistance of planar semiconductor structures
Author :
Hartnagel, H. ; Hutson, V.C.
Author_Institution :
University of Newcastle upon Tyne, Department of Electric & Electronic Engineering, Newcastle upon Tyne, UK
Volume :
119
Issue :
6
fYear :
1972
fDate :
6/1/1972 12:00:00 AM
Firstpage :
655
Lastpage :
658
Abstract :
The heat flow across a substrate with a temperature-dependent thermal conductivity, such as is commonly encountered with planar semiconductor structures, is discussed. Analytic solutions are derived for an isothermal active-layer approximation, and numerical results are presented for a constant heat flux at the active-layer boundary. Important features of the flow of heat in the structures, such as thermal-flow spreading, temperature increases for elevated operating temperatures and other aspects, are treated.
Keywords :
heat sinks; semiconductors; thermal conductivity of solids; FET; Gunn effect devices; heatsink; planar semiconductor structures; thermal conductivity; thermal resistance; thermal variables measurement;
fLanguage :
English
Journal_Title :
Electrical Engineers, Proceedings of the Institution of
Publisher :
iet
ISSN :
0020-3270
Type :
jour
DOI :
10.1049/piee.1972.0140
Filename :
5252093
Link To Document :
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