Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years

Author

Razeghi, M.

Author_Institution

Center for Quantum Devices, Northwestern Univ., Evanston, IL, USA

Volume

6

Issue

6

fYear

2000

Firstpage

1344

Lastpage

1354

Abstract

This paper reviews some of our pioneering contributions to the field of III-V compound semiconductor materials and low-dimensional optoelectronic devices. These contributions span from the ultraviolet (/spl lambda//spl sim/200 nm) up to the far-infrared (/spl lambda//spl sim/25 /spl mu/m) portion of the electromagnetic spectrum and have had a major scientific and technological impact on the semiconductor world in the past 20 years.

Keywords

III-V semiconductors; infrared detectors; integrated optoelectronics; optoelectronic devices; photoconducting devices; photodetectors; quantum well devices; reviews; semiconductor lasers; ultraviolet detectors; wide band gap semiconductors; III-V compound semiconductors; III-V nitrides; IR detectors; QWIP; UV detectors; band alignment; heterogeneous integration; integrated optoelectronics; low-dimensional optoelectronic devices; photoconductive detectors; photodetectors; semiconductor lasers; technological innovation; Germanium alloys; Humans; III-V semiconductor materials; Infrared detectors; Laser theory; Materials science and technology; Microelectronics; Optoelectronic devices; Semiconductor lasers; Semiconductor materials;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.902188

Filename

902188