• DocumentCode
    1436976
  • Title

    Room-temperature continuous wave operation of all-AlGaAs visible (~700 nm) vertical-cavity surface emitting lasers

  • Author

    Hou, H.Q. ; Crawford, M. Hagerott ; Hickman, R.J. ; Hammons, B.E.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    32
  • Issue
    21
  • fYear
    1996
  • fDate
    10/10/1996 12:00:00 AM
  • Firstpage
    1986
  • Lastpage
    1987
  • Abstract
    The authors present the first demonstration of the room-temperature continuous-wave operation of AlGaAs quantum well red (~700 nm) vertical-cavity surface emitting lasers fabricated by the selective oxidation process. The threshold current is ~3.2 mA with an output power of up to 44 μW. The laser structures, containing five Al 0.24Ga0.76As quantum wells, were grown on GaAs (311)A substrates by metal organic vapour phase epitaxy
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 3.2 mA; 44 muW; 700 nm; Al0.24Ga0.76As; GaAs; GaAs (311)A substrates; MOVPE; continuous-wave operation; metal organic VPE; quantum well red VCSEL; room-temperature CW operation; selective oxidation process; semiconductor laser; surface emitting lasers; vapour phase epitaxy; vertical-cavity SEL; visible MQW laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961337
  • Filename
    542883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1436976