DocumentCode :
1437034
Title :
Electromigration in aluminium thin films under pulsed-current conditions
Author :
Davis, J.R.
Author_Institution :
General Post Office, Research Centre, Semiconductor Component Reliability Division, Ipswich, UK
Volume :
123
Issue :
11
fYear :
1976
fDate :
11/1/1976 12:00:00 AM
Firstpage :
1209
Lastpage :
1212
Abstract :
Despite extensive investigation of electromigration in aluminium interconnections, the available data are sufficient to apply to tracks carrying pulsed currents in operational conditions. A theory of electromigration that considers the growth of microscopic voids in a track has been developed for the case of electromigration under pulsed-current conditions. The resulting model has been confirmed by a limited number of experimental results. Failure of tracks stressed with a.c. was observed to be due to mechanisms other than electromigration.
Keywords :
aluminium; electromigration; metallic thin films; metallisation; aluminium thin films; electromigration; integrated circuits; metallisation; microscopic voids; tracks carrying pulsed currents; transistors;
fLanguage :
English
Journal_Title :
Electrical Engineers, Proceedings of the Institution of
Publisher :
iet
ISSN :
0020-3270
Type :
jour
DOI :
10.1049/piee.1976.0241
Filename :
5252535
Link To Document :
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