Title :
Electromigration in aluminium thin films under pulsed-current conditions
Author_Institution :
General Post Office, Research Centre, Semiconductor Component Reliability Division, Ipswich, UK
fDate :
11/1/1976 12:00:00 AM
Abstract :
Despite extensive investigation of electromigration in aluminium interconnections, the available data are sufficient to apply to tracks carrying pulsed currents in operational conditions. A theory of electromigration that considers the growth of microscopic voids in a track has been developed for the case of electromigration under pulsed-current conditions. The resulting model has been confirmed by a limited number of experimental results. Failure of tracks stressed with a.c. was observed to be due to mechanisms other than electromigration.
Keywords :
aluminium; electromigration; metallic thin films; metallisation; aluminium thin films; electromigration; integrated circuits; metallisation; microscopic voids; tracks carrying pulsed currents; transistors;
Journal_Title :
Electrical Engineers, Proceedings of the Institution of
DOI :
10.1049/piee.1976.0241