• DocumentCode
    1437034
  • Title

    Electromigration in aluminium thin films under pulsed-current conditions

  • Author

    Davis, J.R.

  • Author_Institution
    General Post Office, Research Centre, Semiconductor Component Reliability Division, Ipswich, UK
  • Volume
    123
  • Issue
    11
  • fYear
    1976
  • fDate
    11/1/1976 12:00:00 AM
  • Firstpage
    1209
  • Lastpage
    1212
  • Abstract
    Despite extensive investigation of electromigration in aluminium interconnections, the available data are sufficient to apply to tracks carrying pulsed currents in operational conditions. A theory of electromigration that considers the growth of microscopic voids in a track has been developed for the case of electromigration under pulsed-current conditions. The resulting model has been confirmed by a limited number of experimental results. Failure of tracks stressed with a.c. was observed to be due to mechanisms other than electromigration.
  • Keywords
    aluminium; electromigration; metallic thin films; metallisation; aluminium thin films; electromigration; integrated circuits; metallisation; microscopic voids; tracks carrying pulsed currents; transistors;
  • fLanguage
    English
  • Journal_Title
    Electrical Engineers, Proceedings of the Institution of
  • Publisher
    iet
  • ISSN
    0020-3270
  • Type

    jour

  • DOI
    10.1049/piee.1976.0241
  • Filename
    5252535