DocumentCode
1437034
Title
Electromigration in aluminium thin films under pulsed-current conditions
Author
Davis, J.R.
Author_Institution
General Post Office, Research Centre, Semiconductor Component Reliability Division, Ipswich, UK
Volume
123
Issue
11
fYear
1976
fDate
11/1/1976 12:00:00 AM
Firstpage
1209
Lastpage
1212
Abstract
Despite extensive investigation of electromigration in aluminium interconnections, the available data are sufficient to apply to tracks carrying pulsed currents in operational conditions. A theory of electromigration that considers the growth of microscopic voids in a track has been developed for the case of electromigration under pulsed-current conditions. The resulting model has been confirmed by a limited number of experimental results. Failure of tracks stressed with a.c. was observed to be due to mechanisms other than electromigration.
Keywords
aluminium; electromigration; metallic thin films; metallisation; aluminium thin films; electromigration; integrated circuits; metallisation; microscopic voids; tracks carrying pulsed currents; transistors;
fLanguage
English
Journal_Title
Electrical Engineers, Proceedings of the Institution of
Publisher
iet
ISSN
0020-3270
Type
jour
DOI
10.1049/piee.1976.0241
Filename
5252535
Link To Document