DocumentCode :
1437064
Title :
Nanoelectromechanical Memory Cell (T Cell) for Low-Cost Embedded Nonvolatile Memory Applications
Author :
Lee, Kwangseok ; Choi, Woo Young
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Volume :
58
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
1264
Lastpage :
1267
Abstract :
A novel nanoelectromechanical memory cell (T cell) design has been proposed and successfully demonstrated by simulation and experimental results of its prototype cell. The T-cell structure has a simpler fabrication process than the previously reported H cell because the T cell needs only two metal line layers. The T cell can be used for low-cost embedded nonvolatile memory applications.
Keywords :
digital storage; nanoelectromechanical devices; nanofabrication; T-cell; fabrication process; low-cost embedded nonvolatile memory application; metal line layer; nanoelectromechanical memory cell; prototype cell; Multibit operation; T cell; nanoelectromechanical (NEM) memory; nonvolatile memory; simple fabrication;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2104154
Filename :
5703120
Link To Document :
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