DocumentCode
1437087
Title
55.0 Gbit/s/cm data bandwidth density interface in 0.5 μm CMOS for advanced parallel optical interconnects
Author
Madhavan, B. ; Levi, A.F.J.
Author_Institution
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA
Volume
34
Issue
19
fYear
1998
fDate
9/17/1998 12:00:00 AM
Firstpage
1846
Lastpage
1847
Abstract
The authors demonstrate that low cost 0.5 μm CMOS technology may be used to form a bridge between a slow parallel electrical interface and a very high-speed parallel optical interface. The 1 cm wide integrated circuit produced has a bisection data bandwidth of 55 Gbit/s and dissipates 5.7 W
Keywords
CMOS integrated circuits; integrated optoelectronics; optical interconnections; 0.5 micron; 1 cm; 5.7 W; CMOS technology; advanced parallel optical interconnects; bisection data bandwidth; data bandwidth density interface; slow parallel electrical interface;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981331
Filename
722378
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