• DocumentCode
    1437087
  • Title

    55.0 Gbit/s/cm data bandwidth density interface in 0.5 μm CMOS for advanced parallel optical interconnects

  • Author

    Madhavan, B. ; Levi, A.F.J.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA
  • Volume
    34
  • Issue
    19
  • fYear
    1998
  • fDate
    9/17/1998 12:00:00 AM
  • Firstpage
    1846
  • Lastpage
    1847
  • Abstract
    The authors demonstrate that low cost 0.5 μm CMOS technology may be used to form a bridge between a slow parallel electrical interface and a very high-speed parallel optical interface. The 1 cm wide integrated circuit produced has a bisection data bandwidth of 55 Gbit/s and dissipates 5.7 W
  • Keywords
    CMOS integrated circuits; integrated optoelectronics; optical interconnections; 0.5 micron; 1 cm; 5.7 W; CMOS technology; advanced parallel optical interconnects; bisection data bandwidth; data bandwidth density interface; slow parallel electrical interface;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981331
  • Filename
    722378